*Publication List (2016/10/13)     -> Japanese Page


 -   Physics of Spin Relaxation, Polarization (SP1-43)

 -   Carrier dynamics of novel semiconductors or solor cell materials (CD1-9)

 -   Physics in InGaN, GaN (N1-24)

 -   Application of Spin Relaxation (SA1-5)

 -   Quantum Dots, Tunneling, Carrier Transfer(QD1-8)
 -   Tunneling effect and Related devices (T1-19)

 -   Lateral Quantum Confined Structures (LS1-3)
 -   Quantum Wires, Nanorods (W1-5)

 -   Electro-optical Sampling (EO1-3)

 


Books and other publications . (Japanese language)

 著書 (マクスウェル方程式他)

 論説 (研究費配分の課題他)

 



* Physics of Spin Relaxation, Polarization

SP-43 Effect of thermal annealing on electron spin relaxation of beryllium-doped In0.8Ga0.2As0.45P0.55 bulk,
Hao Wu, Lian Ji, Ryo Harasawa, Yuya Yasue, Takanori Aritake, Canyu Jiang, Shulong Lu, and Atsushi Tackeuchi,
AIP Advances 6, 085119 (2016).

SP-42 Observation of picosecond electron spin relaxation in InGaAsP by time-resolved spin-dependent pump and probe reflection measurement,
Ryo Harasawa, Naoki Yamamoto, Hao Wu, Takanori Aritake, Shulong Lu, Lian Ji, Atsushi Tackeuchi,
Physica Status Solidi (B), 252(6), 1244-1247 (2015).

SP-41 Picosecond spin relaxation in low-temperature-grown GaAs,
M. Uemura, K. Honda, Y. Yasue, S.L. Lu, P. Dai, A. Tackeuchi,
Appl. Phys. Lett. 104, 122403 (2014).

SP-40 Observations of exciton and carrier spin relaxation in Be doped p-type GaAs,
Naohiro Asaka, Ryo Harasawa, Shulong Lu, Pan Dai, Atsushi Tackeuchi,
Appl. Phys. Lett. 104, 112404 (2014).

SP-39. Picoseconds Carrier Spin Relaxation in In0.8Ga0.2As/AlAs/AlAs0.56Sb0.44 Coupled Double Quantum Wells,
Ryo Yamaguchi, Shinichiro Gozu, Teruo Mozume, Yoshitsugu Oyanagi, Mitsunori Uemura, Atsushi Tackeuchi,
Jpn. J. Appl. Phys. 52,04CM05 (2013).

SP-38. Exciton and carrier spin relaxations in InGaAs lattice-matched to off-cut Ge substrates,
Takenori Ushimi, Hiromi Nakata, Toshihiro Ishizuka, Kazutoshi Sasayama, Shulong Lu, Jianrong Dong, and Atsushi Tackeuchi,
Appl. Phys. Lett. 100, 252414 (2012).

SP-37. Exciton spin relaxation in In0.53Ga0.47As/AlAs0.56Sb0.44 quantum wells,
K. Sasayama, S. Nakanishi, R. Yamaguchi, Y. Oyanagi, T. Ushimi, S. Gozu, T. Mozume, and A. Tackeuchi,
Appl. Phys. Lett. 100, 092401 (2012).

SP-36. Temperature Dependence of Spin Relaxation Time in InAs Columnar Quantum Dots at 10 to 150K,
Sota Nakanishi, Kazutoshi Sasayama, Yoshitsugu Oyanagi, Ryo Yamaguchi, Shulong Lu, Lianhe Li, Andrea Fiore, and Atsushi Tackeuchi,
Jap. J. Appl. Phys. 51 (2012) 04DM05.

SP-35. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well,
T. Asami, H. Nosho, L. H. Li, J. C. Harmand, S. L. Lu, and A. Tackeuchi,
AIP Conf. Proc. 1399, 665 (2011).

SP-34. Carrier spin relaxation in InGaAs/AlAsSb quantum wells,
T. Nukui, S. Gozu, T. Mozume, S. Izumi, Y. Saeki, and A. Tackeuchi,
AIP Conf. Proc. 1399, 659 (2011).

SP-33. Observation of Spin Relaxation in InGaAs/AlAsSb Quantum Wells,
Sotaro Izumi, Shin-Ichiro Gozu, Teruo Mozume, Yu Saeki, Takao Nukui and Atsushi Tackeuchi,
Jpn. J. Appl. Phys. 49, 04DM03 (2010).

SP-32. Spin-Polarized Localized Exciton Photoluminescence Dynamics in GaInNAs Quantum Wells,
Shulong Lu, Hideteka Nosho, Atsushi Tackeuchi, Lifeng Bian, Jianrong Dong and Zhichuan Niu,
Jap. J. Appl. Phys. 48, 100206 (2009).

SP-31. Time-resolved Studies of Carrier and Spin Dynamics in Quantum Dots and Wide Band-gap Materials,
Atsushi Tackeuchi, Tae Whan Kim, Joo Hyung You, Hong Seok Lee, Hong Lee Park, Takako Chinone and Ji-Hao Liang,
Journal of the Korean Physical Society, 55, pp.107-111 (2009).

SP-30. Spin Relaxation in InAs Columnar Quantum Dots,
Takehiko Umi, Hidetaka Nosho, Shulong Lu, Lianhe Li, Andrea Fiore, and Atsushi Tackeuchi,
Jpn. J. Appl. Phys. 48, 04C199 (2009).

SP-29(=N-23). Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well,
S. L. Lu, L. F. Bian, M. Uesugi, H. Nosho, A. Tackeuchi, and Z. C. Niu,
Appl. Phys. Lett. 92, 051908 (2008).

SP-28. Generation of highly circularly polarized light from uniform InAs/GaAs quantum dots,
K. Kusunoki, N. Tsukiji, T. Umi, A. Tackeuchi, K. Yamaguchi,
physica status solidi (c), 5, pp.378-381 (2008).

SP-27. Carrier spin relaxation in undoped GaAs double quantum wells,
S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto,
physica status solidi (c), 5, pp.326-329 (2008).

SP-26(=N-19). Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN,
H. Otake, T. Kuroda, T. Ushiyama, T. Fujita, A. Tackeuchi, T. Chinone, J.-H. Liang and M. Kajikawa,
Appl. Phys. Lett. 89, 182110 (2006).

SP-25. Spin relaxation and antiferromagnetic coupling in semiconductor quantum dots,
A Tackeuchi, T. Kuroda, K. Yamaguchi, Y. Nakata, N. Yokoyama, T. Takagahara,
Physica E 32, p.354 (2006).

SP-24 (=N-18). Nanosecond excitonic spin relaxation in cubic GaN,
Atsushi Tackeuchi, Hirotaka Otake, Yusuke Ogawa, Takafumi Ushiyama, Taisuke Fujita, Fumiyoshi Takano, and Hiro Akinaga,
Appl. Phys. Lett. 88, 162114 (2006).

SP-23 (=N-14). Subpicosecond exciton spin relaxation in GaN,
T. Kuroda, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, and N. Horio,
Appl. Phys. Lett. 85, pp.3116-3118 (2004).

SP-22. Exciton spin relaxation dynamics in InGaAs/InP quantum wells,
Shunsuke Akasaka, Shogo Miyata, Takamasa Kuroda, and Atsushi Tackeuchi,
Appl. Phys. Lett. 85, pp.2083-2085 (2004).

SP-21. Spin relaxation dynamics in highly uniform InAs quantum dots,
A. Tackeuchi, R. Ohtsubo, K. Yamaguchi, M. Murayama, T. Kitamura, T. Kuroda, and T. Takagahara,
Appl. Phys. Lett. 84, pp.3576-3578 (2004).

SP-20. Electron Spin Flip by Antiferromagnetic Coupling between Semiconductor Quantum Dots,
応用物理学会論文賞
A. Tackeuchi, T. Kuroda, Y. Nakata, M. Murayama, T. Kitamura and N. Yokoyama   
JJAP Paper Award  
Jpn. J. Appl. Phys., 42, Part 1, 7A, pp.4278-4281 (2003). 

SP-19. Observation of spin Pauli blocking in InAs high-uniform quantum dots,
M. Murayama, R. Ohtsubo, T. Kitamura, T. Kuroda, K. Yamaguchi, and A. Tackeuchi,
phys. stat. sol. (c) 0, No. 4, pp.1145-1148 (2003).

SP-18. (Japanese language)
半導体量子ドット間の反強磁性結合による電子スピンの反転,
竹内 淳, 黒田剛正, 中田義昭, 横山直樹
日本物理学会誌, 57巻 12 p.904 (2002).

SP-17. Antiferromagnetic Coupling between Semiconductor Quantum Dots,
A. Tackeuchi, T. Kuroda, R. Sasou, Y. Nakata N. Yokoyama
Physica B, 314, pp.25-29 (2002).

SP-16. (Japanese language)
「半導体量子構造のスピン物性と電子スピンを用いた量子演算の可能性,
武藤俊一, 竹内 淳,
応用物理, 70 2001 pp. 291-295.

SP-15(=QD-4). Observation of interdot tunneling process of spin-polarized electrons,
A. Tackeuchi, Y. Nakata, R. Sasou, K. Mase, T. Kuroda and N. Yokoyama,
Physica E 10, pp.32-35 (2001).

SP-14. No Spin Polarization of Carriers in InGaN
A. Tackeuchi, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata and K. Domen,
Physica E 7, p.1011 (2000).

SP-13. Picosecond Electron Spin-relaxation in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells,
A. Tackeuchi, T. Kuroda, S. Muto and O. Wada,
Physica B 272, p.318 (1999).

SP-12. Electron Spin-relaxation Dynamics in GaAs/AlGaAs Quantum Wells and InGaAs/InP Quantum Wells,
A. Tackeuchi, T. Kuroda, S. Muto, Y. Nishikawa and O. Wada,
Jpn. J. Appl. Phys. 38, p.4680 (1999).

SP-11. Electron Spin-relaxation in GaAs/AlGaAs Quantum Wires analyzed by transient photoluminescence,
T. Nishimura, X. Wang, M. Ogura, A. Tackeuchi and O. Wada,
Jpn. J. Appl. Phys. 38, p.L941 (1999).

SP-10. Carrier mobility dependence of electron spin relaxation in GaAs quantum wells,
R. Terauchi, Y. Ohno, T. Adachi, A. Sato, F. Matsukura, A. Tackeuchi and H. Ohno,
Jpn. J. Appl. Phys. 38, p.2549 (1999).

SP-9. Electron Spin Relaxation Dynamics in InGaAs/InP Multiple-quantum Wells,
A. Tackeuchi and O. Wada,
Jpn. J. Appl. Phys. 37, p.98 (1998).

SP-8. (Japanese language)
半導体量子井戸におけるスピン緩和のダイナミクス
竹内淳, 和田修
応用物理, 979月号, p.960.


SP-7. Electron Spin Relaxation in InGaAs/InP Multiple-quantum Wells,
A. Tackeuchi, O. Wada and Y. Nishikawa,
Appl. Phys. Lett. 70, pp.1131-1133 (1997).

SP-6. Exciton Spin Dynamics in GaAs quantum Wells,
S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi and A. Tackeuchi,
J. Luminescence 72-74, pp.307-308 (1997).

SP-5. Polarization choices in exciton-biexciton system of GaAs quantum wells,
S. Adachi, T. Miyashita, S. Takeyama, Y. Takagi, A. Tackeuchi and M. Nakayama,
Phys. Rev. B Vol.55, No.3, pp.1654-1660 (1997)..

SP-4. Ultrafast Optical Sampling Pump-probe Measurement of Exciton Spin Relaxation in GaAs/AlGaAs Quantum Wells,
S. Adachi, S. Takeyama, Y. Takagi, A. Tackeuchi and S. Muto,
Appl. Phys. Lett. 68, pp.964 - 966 (1996).

SP-3. Room Temperature Electron Spin Dynamics in GaAs/AlGaAs Quantum Wells,
A. Tackeuchi, Y. Nishikawa and O. Wada,
Appl. Phys. Lett. 68, pp.797-799 (1996).

SP-2. Ultrafast Exciton Spin Relaxation in GaAs/AlGaAs and CdMnTe Multiple Quantum Wells,
Y. Takagi, S. Adachi, S. Takeyama, A. Tackeuchi, S. Muto and J.J. Dubowski,
J. Luminescence 58, pp.202-205 (1994).

SP-1. Direct Observation of Picosecond Spin Relaxation of Excitons in GaAs/AlGaAs Quantum Wells using Spin Dependent Optical Nonlinearity,
A.Tackeuchi, S. Muto, T. Inata and T. Fujii,
Appl. Phys. Lett. 56, pp.2213-2215 (1990).


* Carrier dynamics of novel semiconductors or solor cell materials

CD-9. Investigation of InGaAsP solar cells grown by solid-state molecular beam epitaxy,
Lian Ji, Ming Tan, Kazuki Honda, Ryo Harasawa, Yuya Yasue, Yuanyuan Wu, Pan Dai, Atsushi Tackeuchi, Lifeng Bian, Shulong Lu,
Solar Energy Materials and Solar Cells, 137, 68-72 (2015).

CD-8. Investigation of CuGaSe2/CuInSe2 double heterojunction interfaces grown by molecular beam epitaxy,
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi,
AIP Advances 5, 027120 (2015).

CD-7. Study of single crystal CuInSe2 thin films and CuGaSe2/CuInSe2 single quantum well grown by molecular beam epitaxy,
Sathiabama Thiru, Masaki Asakawa, Kazuki Honda, Atsushi Kawaharazuka, Atsushi Tackeuchi, Toshiki Makimoto, Yoshiji Horikoshi,
Journal of Crystal Growth, 425, 203-206 (2015).

CD-6. Time-resolved ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layer,
Qing Yang, Xiaohong Zhou, Takao Nukui, Yu Saeki, Sotaro Izumi, Atsushi Tackeuchi, Hirokazu Tatsuoka, Shuhua Liang,
AIP Advances 4, 027101 (2014).

CD-5. Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells,
Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida,Hui Yang,
Solar Energy Materials and Solar Cells 127, 1 (2014).

CD-4. Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium,
W. He, S.L. Lu, D.S. Jiang, J.R. Dong, A. Tackeuchi, H. Yang,
J. Appl. Phys. 112, 023509 (2012).

CD-3. Novel ultraviolet photoluminescence of ZnO/ZnGa2O4 composite layers,
Qing Yang, Yu Saeki, Sotaro Izumi, Takao Nukui, Atsushi Tackeuchi, Akihiro Ishida, Hirokazu Tatsuoka,
Appl. Surf. Sci. 256(22), pp.6928-6931 (2010).

CD-2. Ultrafast All-optical Modulation by Near-infrared Intersubband Transition in n-doped InGaAs/AlAsSb Quantum Wells,
A.Neogi, H.Yoshida, T.Mozume, N.Georgiev, T.Akiyama, A.Tackeuchi and O.Wada,
Optical and Quantum Electronics 33, pp.975-983 (2001).

CD-1. Carrier dynamics of quantum confined structures,
S. Muto and A. Tackeuchi,
Materials Science and Engineering R22, pp.79-111 (1998).


* Physics in InGaN,GaN

N-24. (=W-5). Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates,
Atsushi Tackeuchi, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, and Sotaro Izumi,
Jpn. J. Appl. Phys. 49, 070201 (2010).

N-23. Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well,
S. L. Lu, L. F. Bian, M. Uesugi, H. Nosho, A. Tackeuchi, and Z. C. Niu,
Appl. Phys. Lett. 92, 051908 (2008).

N-22. Competition between quantum-confined Stark effect and free-carrier screening effect in AlGaN/GaN multiple quantum wells,
T. Fujita, T. Toizumi, Y. Nakazato, A. Tackeuchi, T. Chinone, J. H. Liang, M. Kajikawa,
physica status solidi (c) 5, pp.356-359 (2008).

N-21. Energy relaxation time of hot carriers photoexcited in InGaN,
T. Ushiyama, T. Toizumi, Y. Nakazato, A. Tackeuchi
physica status solidi (c) 5, pp.143-145 (2008).

N-20. Picosecond spin relaxations of acceptor-bound exciton and A-band free exciton in wurtzite GaN,
A. Tackeuchi, H. Otake, T. Fujita, T. Kuroda, T. Chinone, J.-H. Liang, M. Kajikawa,
physica status solidi (c) 3, pp.4303-4306 (2007).

N-19. (=SP-26). Picosecond spin relaxation of acceptor-bound exciton in wurtzite GaN,
H. Otake, T. Kuroda, T. Ushiyama, T. Fujita, A. Tackeuchi, T. Chinone, J.-H. Liang and M. Kajikawa,
Appl. Phys. Lett. 89, 182110 (2006).

N-18. (=SP-24). Nanosecond excitonic spin relaxation in cubic GaN,
Atsushi Tackeuchi, Hirotaka Otake, Yusuke Ogawa, Takafumi Ushiyama, Taisuke Fujita, Fumiyoshi Takano, and Hiro Akinaga,
Appl. Phys. Lett. 88, 162114 (2006).

N-17. Size dependence of carrier recombination efficiency in GaN quantum dots,
A. Neogi, H. Everitt, H. Morkoc, T. Kuroda and A. Tackeuchi,
IEEE Trans. Nanotechnology 4, pp.297-299 (2005).

N-16. Exciton localization in vertically and laterally coupled GaN/AlN quantum dots,
A. Neogi, H. Morkoc, T. Kuroda, A. Tackeuchi, T. Kawazoe and M. Ohtsu,
Nano Letters 5, pp.213-217 (2005).

N-15. Coupling of spontaneous emission from GaN-AlN quantum dots into silver surface plasmons,
A. Neogi, H. Morkoc, T. Kuroda and A. Tackeuchi,
Optics Letters 30, pp.93-95 (2005).

N-14 (=SP-23). Subpicosecond exciton spin relaxation in GaN,
T. Kuroda, T. Yabushita, T. Kosuge, A. Tackeuchi, K. Taniguchi, T. Chinone, and N. Horio,
Appl. Phys. Lett. 85, pp.3116-3118 (2004).

N-13. Enhanced Radiative Efficiency in GaN Quantum Dots Grown by Molecular Beam Epitaxy,
A. Neogi, H. Everitt, H. Morkoc, T. Kuroda, and A. Tackeuchi,
IEEE Trans. Nanotechnology, Vol.2, No.1, p.10 (2003).Mirror

N-12. Time-resolved electroluminescence study of green light-emitting diode,
T. Kuroda, N. Horio, K. Taniguchi, H. Sato, C. Funaoka, A. Tackeuchi,
phys. stat. sol. (c) 0, p.25 (2002).

N-11. (Japanese language)
「緑色発光LEDの時間分解エレクトロルミネッセンス測定」
黒田剛正、藪下智仁、竹内淳、堀尾直史、谷口和与至、山下陽滋、千野根崇子、船岡千洋
信学技報, ED2002-77, LQE2002-52, pp.17-20, 20026.

N-10. Influence of free carrier screening on the luminescence energy shift and carrier lifetime of InGaN quantum wells,
T. Kuroda and A. Tackeuchi,
J. Appl. Phys. 92, pp.3071-3074 (2002).

N-9. Enhancement of spontaneous recombination rate in a quantum well by resonant surface plasmon coupling,
A. Neogi, C. W. Lee, H. O. Everitt,T. Kuroda, A. Tackeuchi, and E. Yablonovitch,
Phys. Rev. B 66, p.153305 (2002).

N-8. Localized exciton dynamics in InGaN quantum well structures
S. F. Chichibu, T. Azuhata, H. Okumura, A. Tackeuchi, T. Sota and T. Mukai,
Appl. Surface Science 190, p.330 (2002)..

N-7. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells,
SF. Chichibu, M. Sugiyama, T. Onuma, T. Kitamura, H. Nakanishi, T. Kuroda, A. Tackeuchi, T. Sota, Y. Ishida, H. Okumura,
Appl. Phys. Lett. 79, p.4319 (2001).

N-6. Band gap bowing and exciton localization in strained cubic InxGa1-xN films grown on 3C-SiC (001) by rf molecular-beam epitaxy,
SF. Chichibu, M. Sugiyama, T. Kuroda, A. Tackeuchi, T. Kitamura, H. Nakanishi, T. Sota, SP. DenBaars, S. Nakamura, Y. Ishida, H. Okumura,
Appl. Phys. Lett. 79, p.3600 (2001).

N-5. Time-resolved Photoluminescence Study of InGaN MQW with a p-Contact Layer,
T. Kuroda R. Sasou, A. Tackeuchi, H. Sato, N. Horio and C. Funaoka,
Phys. stat. sol. (b) 228, p.125 (2001).

N-4. Free Carrier Screening of Quantum-Confined Stark Effect Affecting on Luminescence and Carrier Lifetime in InGaN Quantum Wells,
T. Kuroda and A. Tackeuchi,
IPAP Conf. Series 1, p.516 (2001).Mirror

N-3. Luminescence Energy Shift and Carrier Lifetime Change Dependence on Carrier Density in InGaN/InGaN Quantum Wells,
T. Kuroda, A. Tackeuchi and T. Sota,
Appl. Phys. Lett. 76, p.3753 (2000).

N-2. No Spin Polarization of Carriers in InGaN,
A. Tackeuchi, T. Kuroda, A. Shikanai, T. Sota, A. Kuramata and K. Domen,
Physica E 7, p.1011 (2000).

N-1. A Pump and Probe Study on Photoinduced Internal Field Screening Dynamics in an AlGaN/GaN Single Quantum Well Structure,
A. Shikanai, T. Deguchi, T. Sota, T. Kuroda, A. Tackeuchi, S. Chichibu and S. Nakamura,
Appl. Phys. Lett. 76, 454 (2000).
 


* Application of Spin Relaxation

SA-5. (Japanese language)
「半導体スピン工学の超高速光スイッチへの応用」
竹内
オプトロニクス 983月「半導体スピン工学と光エレクトロニクス」特集号, p.129.

SA-4. Ultrafast All-Optical Spin Polarization Switch using Quantum-Well Etalon,
Y. Nishikawa, A. Tackeuchi, M. Yamaguchi, S. Muto and O. Wada,
IEEE J. Selected Topics in QE, Vol. 2, No. 3, p.661 (1996). Mirror

SA-3. Performance of All-Optical Switch Utilizing the Spin-Depenent Transient Rotation in a Multiple-Quantum-Well Etalon,
Y. Nishikawa, A. Tackeuchi and S. Muto,
Jpn. J. Appl. Phys.Vol. 34, No. 10A, pp.L1283-L1285 (1995).

SA-2. Picosecond All-Optical Switching using Tunneling and Spin-Relaxation in Quantum Well Structures,
A.Tackeuchi, Y. Nishikawa, S. Muto and O. Wada,
Optoelectronics 10, pp.561 - 574 (1995).

SA-1. All-Optical Picosecond Switching of a Quantum Well Etalon Using Spin-Polarization Relaxation,
Y. Nishikawa, A. Tackeuchi and S. Muto,
Appl. Phys. Lett. Vol. 66, No. 7, pp.839-841 (1995).


* Quantum Dots, Tunneling, Carrier Transfer

QD-8. Observation of optical anisotropy of highly uniform InAs quantum dots,
M. Uemura, J. Ohta, R. Yamaguchi, K. Yamaguchi, A. Tackeuchi,
Journal of Crystal Growth 378, pp.463-465 (2013).

QD-7. Short exciton radiative lifetime in submonolayer InGaAs/GaAs quantum dots,
Zhangcheng Xu and Yating Zhang, Atsushi Tackeuchi, Yoshiji Horikoshi and Jorn M. Hvam,
Appl. Phys. Lett. 92, 063103 (2008).

QD-6. Thermally activated carrier transfer among CdTe/ZnTe self-organized quantum dots,
Atsushi Tackeuchi, Shogo Miyata, Seiji Sugawa, Koji Kusunoki, Tae Whan Kim, Jae-Ho Kim, Hong Seok Lee and Hong Lee Park,
Appl. Phys. Lett. 89, 112125 (2006).

QD-5. Direct observation of phonon relaxation bottleneck in InAs quantum dots of high-uniformity,
T. Kitamura, R. Ohtsubo, M. Murayama, T. Kuroda, K. Yamaguchi, and A. Tackeuchi,
phys. stat. sol. (c) 0, No. 4, pp.1165-1168 (2003).

QD-4 (=SP-15). Observation of interdot tunneling process of spin-polarized electrons,
A. Tackeuchi, Y. Nakata, R. Sasou, K. Mase, T. Kuroda and N. Yokoyama,
Physica E 10, pp.32-35 (2001).

QD-3. Dynamics of Carrier Tunneling between Vertically Aligned Double Quantum Dots,
A. Tackeuchi, T. Kuroda, K. Mase, Y. Nakata, and N. Yokoyama,
Phys. Rev. B 62, pp.1568-1571 (2000).

QD-2. Time-Resolved Study of Carrier Transfer among InAs/GaAs Multi-Coupled Quantum Dots,
A. Tackeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Usuki, Y. Nishikawa, N. Yokoyama and O. Wada,
Jpn. J. Appl. Phys. 34, pp.L1439-L1441 (1995).


QD-1. Near 1.3 micron High Intensity Photoluminescence at Room Temperature by InAs/GaAs Multi-coupled Quantum Dots,
A. Tackeuchi, Y. Nakata, S. Muto, Y. Sugiyama, T. Inata and N. Yokoyama,
Jpn. J. Appl. Phys. 34, pp.L405-L407 (1995).


* Tunneling Bi-quantum well or Tunneling Effect

T-19. Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - effect of exciton and free carrier thermodynamic,
S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto,
physica status solidi (c) 5, pp.78-81 (2008).

T-18. Transition from Excitonic Tunneling to Free Carrier Tunneling in GaAs/AlGaAs Double Quantum Wells,
Shulong Lu, Takafumi Ushiyama, Taisuke Fujita, Koji Kusunoki, Atsushi Tackeuchi, and Shunichi Muto,
Jpn. J. Appl. Phys. 46, pp.3305-3308 (2007).

T-17. Femtosecond Saturable Absorption Recovery in a Type-II Tunneling Bi-Quantum Well for Long Waelegth Operation,
Y. Matui, K. Ogawa, A.Tackeuchi, Y. Ogawa and A. Suzuki,
Phys. stat. sol. (b) 204, 416 (1997).

T-16. Band-gap Renormalization and Excitonic Effects in Tunneling in Asymmetric Double Quantum Wells,
A.Tackeuchi, A. P. Heberle, W. W. Ruehle, K. Koehler and S. Muto,
Jpn. J. Appl. Phys. 34, pp.L543-L546 (1995).

T-15. Picosecond Optical Signal Recovery in Tunneling Bi-Quantum-well structures,
A. Tackeuchi, Y. Nishikawa and S. Muto,
Fujitsu Sci. Tech. J. 30, pp.188-194 (1994).

T-14. Dependence of Resonant Electron and Hole Tunneling Times between Quantum Wells on Barrier Thickness,
A. P. Heberle, X. Q. Zhou, A.Tackeuchi, W.W.Ruehle and K. Koehler,
Semicond. Sci. Technol. 9, pp.519-522 (1994).

T-13. Gamma-X Electron Transfer in Type-II Tunneling Bi-quantum Wells,
A. Tackeuchi, U. Strauss, W.W. Ruehle, T. Inata and S. Muto,
Solid State Electronics. 37, pp.809-812 (1994).

T-12. Study of Tunneling Time in Tunneling Bi-quantum Well and Resonant Tunneling Barrier Structures,
Y. Sugiyama, T. Inata, A. Tackeuchi, Y. Nakata, S. Nakamura and S. Muto,
Microwave and optical technology letters pp.85-88 (1994).

T-11. Picosecond Signal Recovery in Type II Tunneling Bi-quantum Well Etalon,
A.Tackeuchi, T. Inata, Y. Nakata, S. Nakamura, Y. Sugiyama and S. Muto,
Appl. Phys. Lett. 61, pp.1892-1894 (1992).

T-10. Fast Recovery of Excitonic Absorption Bleaching in Tunneling Bi-quantum Well,
A. Tackeuchi, T. Inata, S. Muto, Y. Sugiyama and T. Fujii,
Electronics and Communications in Japan, Part 2, 75, p. 25 (1992).

T-9. Differences in Tunneling Time between 77 K and Room Temperature for Tunneling Biquantum Wells,
A. Tackeuchi, Y. Sugiyama, T. Inata, Y. Nakata and S. Muto,
Jpn. J. Appl. Phys. 31, pp.3823-3824 (1992).

T-8. (Japanese language)
トンネル双量子井戸とMQW微細線の超高速応答 電気学会優秀論文発表賞
竹内淳、稲田嗣夫、有本宏、北田秀樹、杉山芳弘、中田義昭、仲村智、遠藤聡、山口正臣、武藤俊一
電気学会 電子材料研究会資料 EFM-92-11 IEEJ Excellent Paper Presentation Award  

T-7. Fast Recovery from Excitonic Absorption Bleaching in Type-II GaAs/AlGaAs/AlAs Tunneling Bi-quantum Well,
A. Tackeuchi, T. Inata, Y. Sugiyama, Y. Nakata, S. Nakamura and S. Muto,
Jpn. J. Appl. Phys. 31, pp. L669-L672 (1992).

T-6. (Japanese language) TBQ
における励起子吸収の超高速回復  電子情報通信学会論文賞 
竹内 淳, 稲田嗣夫, 武藤俊一, 杉山芳弘, 藤井俊夫 IEICE Excellent Paper Award
電子情報通信学会論文誌 C-I, J74-C-I, No.11, pp. 458-464 (1991).

T-5. Time Evolution of Excitonic Absorption Bleaching of Resonant Tunneling Bi-Quantum-well Structures,
A. Tackeuchi, S. Muto, T. Inata and T. Fujii,
Jpn. J. Appl. Phys. 30, pp. 2730-2733 (1991).


T-4. Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum Well Structures,
Y. Sugiyama, A. Tackeuchi, T. Inata and S. Muto,
Jpn. J. Appl. Phys. 30, pp.L1454-L1456 (1991).

T-3. Longitudinal Optical Phonon Assisted Tunneling in Tunneling Bi-Quantum Well Structures,
S. Muto, T. Inata, A. Tackeuchi, Y. Sugiyama and T. Fujii,
Appl. Phys. Lett. 58, pp.2393-2395 (1991).

T-2. Fast Recovery of Excitonic Absorption Bleaching in Tunneling Bi-Quantum Well Structures,
A.Tackeuchi, S. Muto, T. Inata and T. Fujii,
Appl. Phys. Lett. 58, pp.1670-1672 (1991).

T-1. Fast Recovery of Excitonic Absorption Peaks in Tunneling Bi-Quantum Well Structures,
A.Tackeuchi, S. Muto, T. Inata and T. Fujii,
Jpn. J. Appl. Phys. 28, pp.L1098-L1100 (1989).


* Lateral Quantum Confined Structures

LS-3. Transmission electron microscopic evaluation of InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110)InP substrates by molecular beam epitaxy,
O. Ueda, Y. Nakata, A. Tackeuchi, S. Nakamura and S. Muto,
J. Cryst. Growth 150, p.346 (1995).

LS-2. InGaAs/InAlAs in-plane superlattices grown on slightly misoriented (110) InP substrates by molecular beam epitaxy,
Y. Nakata, O. Ueda, A. Tackeuchi, S. Nakamura and S. Muto,
J. Cryst. Growth 150, pp.341-345 (1995).

LS-1. Large Lateral Modulation in InAs/GaAs In-Plane Strained Superlattice on Slightly Misoriented (110) InP Substrate,
Y. Nishikawa, Y. Nakata, A. Tackeuchi, S. Muto and O. Wada,
Jpn. J. Appl. Phys. 34, pp.L915-L917 (1995).


* Quantum Wires, Nanorods

W-5. Picosecond Carrier Recombination of Single-Crystalline GaN Nanorods Grown on Si(111) Substrates,
Atsushi Tackeuchi, Chan Ho Yoo, Tae Whan Kim, Young Hae Kwon, Tae Won Kang, Takao Nukui, Taisuke Fujita, Yoshiaki Nakazato, Yu Saeki, and Sotaro Izumi,
Jpn. J. Appl. Phys. 49, 070201 (2010).

W-4. Effect of Reactive Ion Beam Etching Damage on Exciton Absorption Recovery Time of Multiple Quantum Well Wires,
A. Endoh, H. Arimoto, H. Kitada, A. Tackeuchi and S. Muto,
J. Vac. Sci. Technol. B11, pp.183-186 (1993).

W-3. Fabrication of Sub-100nm Wires and Dots in GaAs/AlGaAs Multiquantum Well using Focused Ion Beam Lithography
H. Kitada, H. Arimoto, A. Tackeuchi, Y. Yamaguchi, Y. Nakata, A. Endoh and S. Muto,
Jpn. J. Appl. Phys.31, pp. L990-L991 (1992).

W-2. Picosecond Excitonic Absorption Recovery of 100 nm GaAs/AlGaAs Multiple Quantum Well Wires
A. Tackeuchi, H. Kitada, H. Arimoto, T. Inata, Y. Sugiyama, Y. Yamaguchi, Y. Nakata, S. Nakamura and S. Muto,
Surf. Science. 267, pp. 267-269 (1992).

W-1. Picosecond Excitonic Absorption Recovery of 100 nm GaAs/AlGaAs Narrow Multiple Quantum Well Wires,
A. Tackeuchi, H. Kitada, H. Arimoto, Y. Sugiyama, A. Endoh, Y. Nakata, T. Inata and S. Muto,
Appl. Phys. Lett. 59, pp.1114-1116 (1991).


* Electro-optical Sampling

EO-3. Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barriers Grown by MBE,
S. Muto, A. Tackeuchi, T. Inata, E. Miyauchi and T. Fujii,
Surf. Science 228, pp.370-372 (1990).

EO-2. Picosecond Characterization of InGaAs/InAlAs Resonant Tunneling Barrier Diode by Electro-Optic Sampling,
A. Tackeuchi, T. Inata, S. Muto and E. Miyauchi,
Jpn. J. Appl. Phys. 28, pp.L750-L753 (1989).

EO-1. Very High Speed GaInAs Metal-Semiconductor-Metal Photodiode incorporating an AlInAs/GaInAs Graded Superlattice,
O. Wada, H. Nobuhara, H. Hamaguchi, T. Mikawa, A. Tackeuchi and T. Fujii,
Appl. Phys. Lett. 54, pp.16-17 (1989).

 


Tackeuchi Laboratory

Department of Applied physics, Waseda University

3-4-1 Okubo, Shinjuku, Tokyo 169-8555, Japan